Go to content
UR Home

Microwave induced patterns in n-GaAs and their photoluminescence imaging

URN to cite this document:
urn:nbn:de:bvb:355-epub-22066
Belkov, Vassilij ; Hirschinger, J. ; Schowalter, Dieter ; Niedernostheide, F. J. ; Ganichev, Sergey ; Prettl, Wilhelm ; Mathúna, D. ; Novák, V.
[img]
Preview
PDF
(365kB)
Date of publication of this fulltext: 05 Aug 2009 13:37


Abstract

Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, concluded ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons