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Microwave induced patterns in n-GaAs and their photoluminescence imaging

Belkov, Vassilij, Hirschinger, J., Schowalter, Dieter, Niedernostheide, F. J., Ganichev, Sergey, Prettl, Wilhelm, Mathúna, D. and Novák, V. (2000) Microwave induced patterns in n-GaAs and their photoluminescence imaging. Physical Review B 61 (20), pp. 13698-13702.

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Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, concluded ...


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Item type:Article
Date:May 2000
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2206
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