Microwave induced patterns in n-GaAs and their photoluminescence imaging

URN to cite this document:: urn:nbn:de:bvb:355-epub-22066
DOI to cite this document:: 10.5283/epub.2206

Belkov, Vassilij ; Hirschinger, J. ; Schowalter, Dieter ; Niedernostheide, F.-J. ; Ganichev, Sergey ; Prettl, Wilhelm ; Mathúna, D. ; Novák, V.

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, concluded ...