Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors

URN to cite this document:: urn:nbn:de:bvb:355-epub-22070
DOI to cite this document:: 10.5283/epub.2207

Ganichev, Sergey ; Ziemann, E. ; Yassievich, Irina ; Prettl, Wilhelm ; Istratov, A. ; Weber, E.

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected fr om the Poole-Frenkel theory has been repeatedly reported in the ...