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Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Ziemann, E., Ganichev, Sergey, Yassievich, Irina, Perel, V. and Prettl, Wilhelm (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Journal of Applied Physics 87 (8), pp. 3843-3849.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/applied_physics2000p3843_characterization.pdf


Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between ...


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Item type:Article
Date:April 2000
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2208
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