| License: Allianz- bzw. Nationallizenz PDF - Published Version (1MB) |
- URN to cite this document:
- urn:nbn:de:bvb:355-epub-220803
- DOI to cite this document:
- 10.5283/epub.22080
Abstract
We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (≈5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upward into free space with a nearly Gaussian far field, allowing a collection efficiency >80% with a ...

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