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Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation

Shul'man, A., Ganichev, Sergey, Dizhur, E., Kotel'nikov, I., Zepezauer, E. and Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. Physica B 272 (1-4), pp. 442-447.

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/physicaB1999_Schottky.pdf, http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-3Y4BRT9-4D&_user=616165&_coverDate=12%2F01%2F1999&_alid=673265221&_rdoc=1&_fmt=summary&_orig=search&_cdi=5535&_sort=d&_docanchor=&view=c&_ct=1&_acct=C000032338&_version=1&_urlVersion=0&_userid


Abstract

The conductance of tunnel junctions formed by n-GaAs and a semitransparent metal electrode on its surface was shown to be changed by normally incident radiation with frequency below the plasma edge of n-GaAs. A spatial redistribution of the electrons due to the radiation pressure and the corresponding change in the shape of the self-consistent Schottky barrier are observed as a photoconductivity ...

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Item type:Article
Date:1999
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1016/S0921-4526(99)00390-7DOI
Keywords:Tunneling; Schottky-barrier junctions; Near-"eld enhancement; Hot electrons and LO phonons in GaAs
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2214
Owner only: item control page

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