Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation

URN to cite this document:: urn:nbn:de:bvb:355-epub-22149
DOI to cite this document:: 10.5283/epub.2214

Shul'man, A. ; Ganichev, Sergey ; Dizhur, E. ; Kotel'nikov, I. ; Zepezauer, E. ; Prettl, Wilhelm

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

The conductance of tunnel junctions formed by n-GaAs and a semitransparent metal electrode on its surface was shown to be changed by normally incident radiation with frequency below the plasma edge of n-GaAs. A spatial redistribution of the electrons due to the radiation pressure and the corresponding change in the shape of the self-consistent Schottky barrier are observed as a photoconductivity ...