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Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions

Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Dizhur, E., Ormont, A., Zepezauer, E. and Prettl, Wilhelm (1999) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. World Scientific, Singapore, Th-P58. ISBN 981-02-4030-9.

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Date of publication of this fulltext: 05 Aug 2009 13:38

Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/Proceedings_ICPS1998nearfield_cd.pdf


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Item type:Book section
Date:1999
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2222
Owner only: item control page

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