Characterization of deep impurities in semiconductors by terahertz tunnel ionization
Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Schmalz, K. and Prettl, Wilhelm (1998) Characterization of deep impurities in semiconductors by terahertz tunnel ionization. In: Ashok, S. and Chevallier, J. and Sumino, K. and Sopori, B. L. and Goetz, W., (eds.) Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A. Materials Research Society symposium proceedings, 510. Materials Research Society, Warrendale, Pa., p. 595. ISBN 1-558-99416-5.Date of publication of this fulltext: 05 Aug 2009 13:38
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| Item type | Book section |
| ISBN | 1-558-99416-5 |
| Journal or Publication Title | in: Defect and Impurity Engineered Semiconductors and Devices II, MRS Symp. Proc. , eds. S. Ashok, J. Chevallier, K. Sumino, B. L. Sopori, and W. Goetz |
| Title of Book: | Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A |
|---|---|
| Publisher: | Materials Research Society |
| Place of Publication: | Warrendale, Pa. |
| Other Series: | Materials Research Society symposium proceedings |
| Volume: | 510 |
| Page Range: | p. 595 |
| Date | 1998 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| Item ID | 2225 |
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