Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Schmalz, K. and Prettl, Wilhelm (1998) Characterization of deep impurities in semiconductors by terahertz tunnel ionization. In: Ashok, S. and Chevallier, J. and Sumino, K. and Sopori, B. L. and Goetz, W., (eds.) Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A. Materials Research Society symposium proceedings, 510. Materials Research Society, Warrendale, Pa., p. 595. ISBN 1-558-99416-5.
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| Item type: | Book section |
|---|---|
| Date: | 1998 |
| Institutions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification: | 500 Science > 530 Physics |
| Status: | Published |
| Refereed: | Yes, this version has been refereed |
| Created at the University of Regensburg: | Yes |
| Item ID: | 2225 |
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