Go to content
UR Home

Tunnel ionization of deep impurities by far-infrared radiation

Ganichev, Sergey, Yassievich, Irina and Prettl, Wilhelm (1996) Tunnel ionization of deep impurities by far-infrared radiation. Semiconductor Science and Technology 11 (5), pp. 679-691.

[img]
Preview
PDF
Download (270kB)
Date of publication of this fulltext: 05 Aug 2009 13:38

at publisher (via DOI)

Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/semicond_science_technol1996_tunneling.pdf, http://www.iop.org/EJ/abstract/0268-1242/11/5/006


Abstract

Tunnel ionization of semiconductor deep impurity centres has been investigated in a field of far-infrared radiation where photon energies are several factors of ten smaller than the binding energy of the impurities. Depending on the radiation electric field strength, ionization is caused by phonon-assisted tunnel ionization or direct electron tunnelling. Applying high-power pulsed lasers, two ...

plus


Export bibliographical data



Item type:Article
Date:May 1996
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1088/0268-1242/11/5/006DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2232
Owner only: item control page

Downloads

Downloads per month over past year

  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons