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Tunnel ionization of deep impurities by far-infrared radiation

URN to cite this document:
urn:nbn:de:bvb:355-epub-22324
Ganichev, Sergey ; Yassievich, Irina ; Prettl, Wilhelm
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Date of publication of this fulltext: 05 Aug 2009 13:38


Abstract

Tunnel ionization of semiconductor deep impurity centres has been investigated in a field of far-infrared radiation where photon energies are several factors of ten smaller than the binding energy of the impurities. Depending on the radiation electric field strength, ionization is caused by phonon-assisted tunnel ionization or direct electron tunnelling. Applying high-power pulsed lasers, two ...

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