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Tunnel ionization of deep impurities by far-infrared radiation

Ganichev, Sergey, Yassievich, Irina and Prettl, Wilhelm (1996) Tunnel ionization of deep impurities by far-infrared radiation. Semiconductor Science and Technology 11 (5), pp. 679-691.

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Date of publication of this fulltext: 05 Aug 2009 13:38

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/semicond_science_technol1996_tunneling.pdf, http://www.iop.org/EJ/abstract/0268-1242/11/5/006


Tunnel ionization of semiconductor deep impurity centres has been investigated in a field of far-infrared radiation where photon energies are several factors of ten smaller than the binding energy of the impurities. Depending on the radiation electric field strength, ionization is caused by phonon-assisted tunnel ionization or direct electron tunnelling. Applying high-power pulsed lasers, two ...


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Item type:Article
Date:May 1996
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2232
Owner only: item control page


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