Tunnel ionization of deep impurities by far-infrared radiation

URN to cite this document:: urn:nbn:de:bvb:355-epub-22324
DOI to cite this document:: 10.5283/epub.2232

Ganichev, Sergey ; Yassievich, Irina ; Prettl, Wilhelm

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Date of publication of this fulltext: 05 Aug 2009 13:38

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Abstract

Tunnel ionization of semiconductor deep impurity centres has been investigated in a field of far-infrared radiation where photon energies are several factors of ten smaller than the binding energy of the impurities. Depending on the radiation electric field strength, ionization is caused by phonon-assisted tunnel ionization or direct electron tunnelling. Applying high-power pulsed lasers, two ...