Ganichev, Sergey, Yassievich, Irina and Prettl, Wilhelm (1996) Tunnel ionization of deep impurities by far-infrared radiation. Semiconductor Science and Technology 11 (5), pp. 679-691.
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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/semicond_science_technol1996_tunneling.pdf, http://www.iop.org/EJ/abstract/0268-1242/11/5/006
Abstract
Tunnel ionization of semiconductor deep impurity centres has been investigated in a field of far-infrared radiation where photon energies are several factors of ten smaller than the binding energy of the impurities. Depending on the radiation electric field strength, ionization is caused by phonon-assisted tunnel ionization or direct electron tunnelling. Applying high-power pulsed lasers, two ...
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | May 1996 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number: |
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| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Yes | ||||
| Item ID: | 2232 |
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