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Tunnelling ionization of autolocalized DX- centers in terahertz fields

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DOI to cite this document:
Ganichev, Sergey ; Diener, J. ; Yassievich, Irina ; Prettl, Wilhelm ; Meyer, B. ; Benz, K.
Date of publication of this fulltext: 05 Aug 2009 13:38


Tunneling ionization of DX- centers in AlxGa1-xSb has been observed in terahertz radiation fields. Tunneling times have been measured for autolocalized and on-site deep impurities. It is shown that in one case the tunneling time is smaller and in the other larger than the reciprocal temperature multiplied by a universal constant due to the different tunneling trajectories. This allows one to distinguish in a direct way between the two types of configuration potentials of impurities.

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