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Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs

Kotel'nikov, I., Shul'man, A., Mordovets, N., Varvanin, N., Ganichev, Sergey, Mayerhofer, B. and Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: Towe, E., (ed.) Proceedings / 1995 International Semiconductor Device Research Symposium, December 5 - 8, 1995, Band 1. Engineering Academic Outreach, University of Virginia, Charlottesville, Va., p. 99. ISBN 1-88092-003-4.

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Date of publication of this fulltext: 05 Aug 2009 13:38

Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/Proceedings_ISDRS_Charlotesville_1995p99effect_of_pulsed.pdf


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Item type:Book section
Date:1995
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2250
Owner only: item control page

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