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Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation
Ganichev, Sergey, Diener, J. and Prettl, Wilhelm (1994) Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation. Solid State Communications 92 (11), pp. 883-887.Date of publication of this fulltext: 05 Aug 2009 13:38
Article
DOI to cite this document: 10.5283/epub.2256
Abstract
Ionization of semiconductor deep impurity centers has been observed in the far infrared where photon energies are several factors of ten smaller than the binding energy of the impurities. It is shown that the ionization is caused at high intensities by direct tunnel ionization in the electric field of the high power radiation. This optical method allows the investigation of the tunnelling process at electric bias fields well below the threshold of avalanche breakdown.
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| Item type | Article |
| Journal or Publication Title | Solid State Communications |
| Publisher: | Elsevier Science |
|---|---|
| Volume: | 92 |
| Number of Issue or Book Chapter: | 11 |
| Page Range: | pp. 883-887 |
| Date | December 1994 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-22560 |
| Item ID | 2256 |
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