Go to content
UR Home

Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation

URN to cite this document:
urn:nbn:de:bvb:355-epub-22560
DOI to cite this document:
10.5283/epub.2256
Ganichev, Sergey ; Diener, J. ; Prettl, Wilhelm
[img]
Preview
PDF
(292kB)
Date of publication of this fulltext: 05 Aug 2009 13:38


Abstract

Ionization of semiconductor deep impurity centers has been observed in the far infrared where photon energies are several factors of ten smaller than the binding energy of the impurities. It is shown that the ionization is caused at high intensities by direct tunnel ionization in the electric field of the high power radiation. This optical method allows the investigation of the tunnelling process at electric bias fields well below the threshold of avalanche breakdown.


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons