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Phonon assisted tunnel ionization of deep impurities in the electric field of far-infrared radiation

Ganichev, Sergey, Prettl, Wilhelm and Huggard, P.G. (1993) Phonon assisted tunnel ionization of deep impurities in the electric field of far-infrared radiation. Physical Review Letters 71 (23), pp. 3882-3885.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/prl1993_tunneling.pdf


Abstract

Ionization of semiconductor deep impurity centers has been observed in the far infrared, where photon energies are several factors of 10 smaller than the binding energy of the impurities. It is shown that the ionization is caused by phonon assisted tunneling in the electric field of the high power radiation. This optical method allows the investigation of the tunneling process at electric bias fields well below the threshold of avalanche breakdown.


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Item type:Article
Date:December 1993
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1103/PhysRevLett.71.3882DOI
Classification:
NotationType
79.70.+qPACS
71.55.JvPACS
72.20.HtPACS
72.40.+wPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2260
Owner only: item control page

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