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Intraband photoconductivity due to light holes and heating of carriers in p-type Ge by submillimeter laser excitation
Ganichev, Sergey, Emel'yanov, S. and Yaroshetskii, I. (1987) Intraband photoconductivity due to light holes and heating of carriers in p-type Ge by submillimeter laser excitation. Semiconductors 21 (6), pp. 618-620.Date of publication of this fulltext: 05 Aug 2009 13:39
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DOI to cite this document: 10.5283/epub.2286
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| Item type | Article |
| Journal or Publication Title | Semiconductors |
| Publisher: | Interperiodica |
|---|---|
| Volume: | 21 |
| Number of Issue or Book Chapter: | 6 |
| Page Range: | pp. 618-620 |
| Date | June 1987 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-22861 |
| Item ID | 2286 |
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