Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

URN to cite this document:: urn:nbn:de:bvb:355-epub-235347
DOI to cite this document:: 10.5283/epub.23534

Endres, Bernhard ; Ciorga, Mariusz ; Wagner, Robert ; Ringer, Sebastian ; Utz, Martin ; Bougeard, Dominique ; Weiss, Dieter ; Back, Christian H. ; Bayreuther, Günther

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Date of publication of this fulltext: 06 Mar 2012 07:14

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Abstract

The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 μm thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, ...