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Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

Endres, Bernhard, Ciorga, Mariusz, Wagner, Robert, Ringer, Sebastian, Utz, Martin, Bougeard, Dominique, Weiss, Dieter, Back, Christian H. and Bayreuther, Günther (2012) Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel. Applied Physics Letters 100, p. 92405.

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Date of publication of this fulltext: 06 Mar 2012 07:14

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Other URL: http://dx.doi.org/10.1063/1.3691175


Abstract

The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 μm thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, ...

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Item type:Article
Date:1 March 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.3691175DOI
Classification:
NotationType
72.25.Dc, 75.30.Ds, 75.30.Wx, 75.40.Gb, 75.50.Pp, 75.78.CdPACS
Keywords:current density, gallium arsenide, Hanle effect, III-V semiconductors, numerical analysis, spin dynamics, spin polarised transport PACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:23534
Owner only: item control page

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