Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping

URN to cite this document:: urn:nbn:de:bvb:355-epub-243252
DOI to cite this document:: 10.5283/epub.24325

Hirmer, Marika ; Schuh, Dieter ; Wegscheider, Werner

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Date of publication of this fulltext: 14 May 2012 08:53

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Abstract

We fabricated carbon doped InAs/In(x)Ga(1-x)As/In(x)Al(1-x)As heterostructures, which show p-type and n-type conductivity for different In contents. Two-dimensional hole gas in a structure with x = 0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant in InAs exhibits electron conductivity in In(x)Ga(1-x)As and In(x)Al(1-x)As compounds with high indium ...