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Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping

URN to cite this document:
urn:nbn:de:bvb:355-epub-243252
Hirmer, Marika ; Schuh, Dieter ; Wegscheider, Werner
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Date of publication of this fulltext: 14 May 2012 08:53


Abstract

We fabricated carbondopedInAs/InxGa1−xAs/InxAl1−xAsheterostructures, which show p-type and n-type conductivity for different In contents. Two-dimensional hole gas in a structure with x=0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant in InAs exhibits electron conductivity in InxGa1−xAs and InxAl1−xAs compounds with high indium content. A special ...

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