Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode

Conference or workshop item

Shul'man, A., Kotel'nikov, I., Ganichev, Sergey, Ormont, A., Varvanin, N. and Prettl, Wilhelm (1997) Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode. In: 3rd Russian conference on semiconductor physics "Semiconductors-97", 01. - 05. Dezember 1997, Moskau, Russland.

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Involved Institutions

• Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev

  Browse publications

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Details

Item type	Conference or workshop item (UNSPECIFIED)
Page Range	p. 162
Date	1997
Date of publication	05 Aug 2009 13:39
Institutions	Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Dewey Decimal Classification	500 Science > 530 Physics
Status	Published
Refereed	Yes, this version has been refereed
Created at the University of Regensburg	Yes
Item ID	2450

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