Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

URN to cite this document:: urn:nbn:de:bvb:355-epub-252486
DOI to cite this document:: 10.5283/epub.25248

Raith, Martin ; Stano, Peter

; Fabian, Jaroslav

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Date of publication of this fulltext: 02 Jul 2012 12:53

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Abstract

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of Si-29 (natural or purified abundance), is investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation ...