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Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

URN to cite this document:
urn:nbn:de:bvb:355-epub-252486
DOI to cite this document:
10.5283/epub.25248
Raith, Martin ; Stano, Peter ; Fabian, Jaroslav
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Date of publication of this fulltext: 02 Jul 2012 12:53



Abstract

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of 29Si (natural or purified abundance), is investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation ...

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