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MBE growth of GaAs nanowires and nanowire heterostructures

Rudolph, Andreas (2012) MBE growth of GaAs nanowires and nanowire heterostructures. PhD, Universität Regensburg.

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Date of publication of this fulltext: 16 Aug 2012 09:28

Abstract (English)

In the first part of this thesis, the influence of different growth parameters on the NW morphology and the NW crystal structure was investigated. To explain our observations, a theory was developed which relates the Ga content of the catalyst droplet during growth to the crystal structure of a single NW. Applying this theory to the sample preparation procedure and to the NW growth parameters ...


Translation of the abstract (German)

Im ersten Teil der vorgelegten Arbeit wurde der Einfluss der Wachstumsparameter auf die Nanodraht-Morphologie und Kristallstruktur untersucht. Es wurde eine Theorie entwickelt, welche den Galliumgehalt des Katalysatortröpfchens während des Wachstums mit der Kristallstruktur des Nanodrahts in Verbindung setzt. Diese Theorie ermöglicht die Herstellung von Nanodrähten mit reiner WZ- und ...


Export bibliographical data

Item type:Thesis of the University of Regensburg (PhD)
Date:16 August 2012
Referee:Prof. Dr. Werner Wegscheider
Date of exam:19 July 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Interdisciplinary Subject Network:Not selected
Keywords:Nanodraht, Kristallstruktur, Vorstrukturierung, Kern Schale, Magnetismus, Nanowire, crystal structure, pre-structuring, core shell, magnetism
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:25631
Owner only: item control page


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