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Bulk and structure inversion asymmetry in semiconductor quantum well structures

Lechner, Vera (2012) Bulk and structure inversion asymmetry in semiconductor quantum well structures. PhD, Universität Regensburg.

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Date of publication of this fulltext: 17 Sep 2012 07:29

Abstract (English)

Spintronics utilizes the electron’s spin degree of freedom as information carrier. The basis of this fast growing research area is given by spin-orbit coupling (SOI), which lifts the spin degeneracy of the energy bands in low dimensional semiconductor heterostructures. The resulting spin dependent band splitting in k-space is described by the k-linear Rashba terms and the k-linear and k-cubic ...

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Translation of the abstract (German)

In der Spintronik wird der Spin eines Elektrons als Informationsträger genutzt. Die Grundlage dieses schnell wachsenden Forschungsgebiets liefert die Spin-Bahn-Kopplung (SOI), die die Spinentartung der Energiebänder in niederdimensionalen Halbleiter-Heterostrukturen aufhebt. Die daraus resultierende Spin-abhängige Band-Aufspaltung im k-Raum wird durch k-lineare Rashba-Terme und k-lineare sowie ...

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Item type:Thesis of the University of Regensburg (PhD)
Date:17 September 2012
Referee:Prof. Dr. Sergey D. Ganichev
Date of exam:19 July 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Keywords:Spin-orbit interaction, Rashba, Dresselhaus, BIA, SIA, persistent spin helix, III-V semiconductor, quantum wells, spin relaxation, weak anti-localization
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:25885
Owner only: item control page

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