Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

URN to cite this document:: urn:nbn:de:bvb:355-epub-277334
DOI to cite this document:: 10.5283/epub.27733

Birkner, Bastian ; Pachniowski, Daniel ; Sandner, Andreas ; Ostler, Markus ; Seyller, Thomas

; Fabian, Jaroslav

; Ciorga, Mariusz ; Weiss, Dieter ; Eroms, Jonathan

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Date of publication of this fulltext: 20 Feb 2013 15:13

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Abstract

We present results of nonlocal and three-terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 ∘C for 15 minutes in vacuum. The values of spin relaxation length Ls and spin relaxation time τs obtained after annealing are reduced by a factor 2 and 4, respectively, ...