Interplay between electrical transport properties of GeMn thin films and Ge substrates

URN to cite this document:: urn:nbn:de:bvb:355-epub-277717
DOI to cite this document:: 10.5283/epub.27771

Sircar, N. ; Ahlers, S. ; Majer, C. ; Abstreiter, Gerhard ; Bougeard, Dominique

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Date of publication of this fulltext: 27 Feb 2013 14:09

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Abstract

We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small band gap. Anomalous Hall measurements and large magnetoresistance effects are completely understood by taking a dominating ...