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Interplay between electrical transport properties of GeMn thin films and Ge substrates

Sircar, N., Ahlers, S., Majer, C., Abstreiter, Gerhard and Bougeard, Dominique (2011) Interplay between electrical transport properties of GeMn thin films and Ge substrates. Phys. Rev. B 83, p. 125306.

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Abstract

We present evidence that electrical transport studies of epitaxial p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate, related to the large intrinsic conductivity of Ge due to its small band gap. Anomalous Hall measurements and large magnetoresistance effects are completely understood by taking a dominating ...

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Item type:Article
Date:2011
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1103/PhysRevB.83.125306DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:27771
Owner only: item control page

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