Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

URN to cite this document:: urn:nbn:de:bvb:355-epub-277765
DOI to cite this document:: 10.5283/epub.27776

Tan, P. H. ; Brunner, K. ; Bougeard, Dominique ; Abstreiter, Gerhard

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Date of publication of this fulltext: 04 Mar 2013 13:52

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Abstract

A detailed Raman characterization of the structural properties of as-grown and annealed self-assembled Si/Ge dot multilayers is reported in this paper. Several new modes in as-grown or annealed Si/Ge dots and a frequency splitting of 4.2 cm(-1) between the longitudinal (LO) and transversal optical (TO) Ge-Ge modes in as-grown Si/Ge dots are observed in Raman spectra. An average Ge content of 0.8 ...