Go to content
UR Home

Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

URN to cite this document:
urn:nbn:de:bvb:355-epub-277765
Tan, P. H. ; Brunner, K. ; Bougeard, Dominique ; Abstreiter, Gerhard
[img]
Preview
PDF - Published Version
(184kB)
Date of publication of this fulltext: 04 Mar 2013 13:52


Abstract

A detailed Raman characterization of the structural properties of as-grown and annealed self-assembled Si/Ge dot multilayers is reported in this paper. Several new modes in as-grown or annealed Si/Ge dots and a frequency splitting of 4.2 cm(-1) between the longitudinal (LO) and transversal optical (TO) Ge-Ge modes in as-grown Si/Ge dots are observed in Raman spectra. An average Ge content of 0.8 ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons