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Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

Tan, P. H., Brunner, K., Bougeard, Dominique and Abstreiter, Gerhard (2003) Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots. Phys. Rev. B 68, p. 125302.

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Abstract

A detailed Raman characterization of the structural properties of as-grown and annealed self-assembled Si/Ge dot multilayers is reported in this paper. Several new modes in as-grown or annealed Si/Ge dots and a frequency splitting of 4.2 cm(-1) between the longitudinal (LO) and transversal optical (TO) Ge-Ge modes in as-grown Si/Ge dots are observed in Raman spectra. An average Ge content of 0.8 ...

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Item type:Article
Date:2003
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1103/PhysRevB.68.125302DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:No
Item ID:27776
Owner only: item control page

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