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Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

Tan, P. H., Bougeard, Dominique, Abstreiter, Gerhard and Brunner, K. (2005) Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy. J. Appl. Phys. 98, p. 113517.

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Abstract

We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands ...

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Item type:Article
Date:2005
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1063/1.2140078DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:No
Item ID:27792
Owner only: item control page

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