Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

URN to cite this document:: urn:nbn:de:bvb:355-epub-277920
DOI to cite this document:: 10.5283/epub.27792

Tan, P. H. ; Bougeard, Dominique ; Abstreiter, Gerhard ; Brunner, K.

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Date of publication of this fulltext: 05 Mar 2013 07:24

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Abstract

We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands ...