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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-277920
- DOI to cite this document:
- 10.5283/epub.27792
Alternative links to fulltext:DOI
Abstract
We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands ...

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