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Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

Bougeard, Dominique ; Tan, P. H. ; Sabathil, M. ; Vogl, P. ; Abstreiter, Gerhard ; Brunner, K.



Abstract

We report the first resonant electronic Raman spectroscopy study of discrete electronic transitions within small p-doped self-assembled Si/Ge quantum dots (QDs). A heavy hole (hh) to light hole (lh) Raman transition with a dispersionless energy of 105 meV and a resonance energy of the hh states to virtually localised electrons at the direct band gap of 2.5 eV are observed. The hh-lh transition ...

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