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Ge quantum dots in Si: self-assembly, stacking and level spectroscopy

Brunner, K. ; Herbst, M. ; Bougeard, Dominique ; Miesner, C. ; Asperger, T. ; Schramm, C. ; Abstreiter, Gerhard



Abstract

Ge quantum dots in Si were fabricated by molecular beam epitaxy in the Stranski Krastanow growth mode at low substrate temperatures and were investigated by optical and electrical spectroscopy. The dot size is about 20 nm in width and 2 nm in height for a substrate temperature of about 510 C. The effective valence band structure of such Si/Ge quantum dots is consistently analyzed by type-II ...

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