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Ge quantum dots in Si: self-assembly, stacking and level spectroscopy

Brunner, K., Herbst, M., Bougeard, Dominique, Miesner, C., Asperger, T., Schramm, C. and Abstreiter, Gerhard (2002) Ge quantum dots in Si: self-assembly, stacking and level spectroscopy. Physica E 13, p. 1018.

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Abstract

Ge quantum dots in Si were fabricated by molecular beam epitaxy in the Stranski Krastanow growth mode at low substrate temperatures and were investigated by optical and electrical spectroscopy. The dot size is about 20 nm in width and 2 nm in height for a substrate temperature of about 510 C. The effective valence band structure of such Si/Ge quantum dots is consistently analyzed by type-II ...

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Item type:Article
Date:2002
Additional Information (public):10th International Conference on Modulated Semiconductor Structures, LINZ, AUSTRIA, JUL 23-27, 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1016/S1386-9477(02)00292-8DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:No
Item ID:27795
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