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Ge quantum dots in Si: self-assembly, stacking and level spectroscopy

Brunner, K., Herbst, M., Bougeard, Dominique, Miesner, C., Asperger, T., Schramm, C. and Abstreiter, Gerhard (2002) Ge quantum dots in Si: self-assembly, stacking and level spectroscopy. Physica E 13, p. 1018.

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Ge quantum dots in Si were fabricated by molecular beam epitaxy in the Stranski Krastanow growth mode at low substrate temperatures and were investigated by optical and electrical spectroscopy. The dot size is about 20 nm in width and 2 nm in height for a substrate temperature of about 510 C. The effective valence band structure of such Si/Ge quantum dots is consistently analyzed by type-II ...


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Item type:Article
Additional Information (public):10th International Conference on Modulated Semiconductor Structures, LINZ, AUSTRIA, JUL 23-27, 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:No
Item ID:27795
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