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A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

Sailer, J., Lang, V., Abstreiter, G., Tsuchiya, G., Itoh, K. M., Ager, J. W., Haller, E. E., Kupidura, D., Harbusch, D., Ludwig, S. and Bougeard, Dominique (2009) A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure. Phys. Stat. Sol. RRL 3, p. 61.

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Abstract

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using (28)Si and (70)Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system ...

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Item type:Article
Date:2009
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1002/pssr.200802275DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:27800
Owner only: item control page
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