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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Journal or Publication Title: | Journal of Electronic Materials | ||||
| Publisher: | TMS | ||||
| Volume: | 39 | ||||
| Number of Issue or Book Chapter: | 7 | ||||
| Page Range: | pp. 918-923 | ||||
| Date: | 2010 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number: |
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| Keywords: | Growth, HgTe, HgCdTe, quantum wells (QWs), ellipsometric parameters, MBE, far-infrared, mid-infrared, detector | ||||
| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Item ID: | 27852 |
Metadata last modified: 25 May 2018 12:56
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