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High-mobility two-dimensional hole gases in III-V semiconductor heterostructures: growth and transport properties

URN to cite this document:
urn:nbn:de:bvb:355-epub-278908
Hirmer, Marika
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Date of publication of this fulltext: 19 Mar 2013 11:50


Abstract (English)

In this work, we investigated very high quality carbon-doped two-dimensional hole gases (2DHGs). The first part deal with high-mobility GaAs/AlGaAs quantum wells (QWs). Optimizing the heterostructure design, the hole mobility was extremely increased. Quantum Hall effect, photoconductivity effect, Rashba spin splitting, fractional quantum Hall effect (revealing interesting anisotropy in the ...

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Translation of the abstract (German)

In dieser Arbeit wurden mit Kohlenstoff dotierte zwei dimensionale Lochgase (2DHGs) von sehr hoher Qualität untersucht. Der erste Teil behandelt hochbewegliche GaAs/AlGaAs Quanten-Tröge (QWs). Mit der Optimierung des Designs der Heterostruktur konnte die Lochbeweglichkeit enorm erhöht werden. Es wurden insbesondere der Quantum Hall-Effekt, der Photoconductivity-Effekt, die Rashba ...

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