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High-mobility two-dimensional hole gases in III-V semiconductor heterostructures: growth and transport properties

Hirmer, Marika (2013) High-mobility two-dimensional hole gases in III-V semiconductor heterostructures: growth and transport properties. Dissertationsreihe der Fakultät für Physik der Universität Regensburg 29, PhD, Universität Regensburg.

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Date of publication of this fulltext: 19 Mar 2013 11:50

Abstract (English)

In this work, we investigated very high quality carbon-doped two-dimensional hole gases (2DHGs). The first part deal with high-mobility GaAs/AlGaAs quantum wells (QWs). Optimizing the heterostructure design, the hole mobility was extremely increased. Quantum Hall effect, photoconductivity effect, Rashba spin splitting, fractional quantum Hall effect (revealing interesting anisotropy in the ...


Translation of the abstract (German)

In dieser Arbeit wurden mit Kohlenstoff dotierte zwei dimensionale Lochgase (2DHGs) von sehr hoher Qualität untersucht. Der erste Teil behandelt hochbewegliche GaAs/AlGaAs Quanten-Tröge (QWs). Mit der Optimierung des Designs der Heterostruktur konnte die Lochbeweglichkeit enorm erhöht werden. Es wurden insbesondere der Quantum Hall-Effekt, der Photoconductivity-Effekt, die Rashba ...


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Item type:Thesis of the University of Regensburg (PhD)
Series of the University of Regensburg:Dissertationsreihe der Fakultät für Physik der Universität Regensburg
Date:19 March 2013
Referee:Prof. Dr. Werner Wegscheider
Date of exam:9 November 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Keywords:molecular beam epitaxy, two-dimensional hole gas, heterostructure, magnetotransport, gallium arsenide, gallium aluminum arsenide, indium arsenide, indium gallium arsenide, indium aluminum arsenide, spin-orbit coupling, spin splitting, quantum Hall effect, fractional quantum Hall effect, activation gap, weak antilocalization, hole-hole interaction, photoconductivity
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:27890
Owner only: item control page


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