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Spin-Injection into GaAs using ferromagnetic (Ga,Mn)As contacts

Einwanger, Andreas (2013) Spin-Injection into GaAs using ferromagnetic (Ga,Mn)As contacts. PhD, Universität Regensburg.

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Date of publication of this fulltext: 02 Jul 2013 14:39

Abstract (English)

In our work we have employed a successful all electrical and all semiconductor spin injection scheme. Our samples base on a new class of so-called diluted magnetic semiconductors, namely its best known representative GaMnAs. In our experiments we were able to reliably achieve spin injection efficiencies of remarkably high 50% and slightly above. The results obtained from nonlocal in-plane ...


Translation of the abstract (German)

In dieser Arbeit wurde elektrische Spin-Injektion in einem komplett aus Halbleitern bestehendem Bauelement nachgewiesen. Unsere Proben basierten auf einer neuen Materialklasse von so genannten Verdünnten Magnetischen Halbleitern, insbesondere derem bekanntesten Vertreter GaMnAs. Wir konnten wiederholt bemerkenswert hohe Spin-Injektionseffizienzen von über 50% erzielen.Dabei waren die Ergebnisse ...


Export bibliographical data

Item type:Thesis of the University of Regensburg (PhD)
Date:2 July 2013
Referee:Prof. Dr. Dieter Weiss
Date of exam:16 July 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Keywords:(Ga,Mn)As, GaMnAs, Spin, Spin-Injection, Spin-Diffusion, Spin-Injection-Efficiency, Spin-Diffusion-Length, Spin-Relaxation, Spin-Dynamics, Semiconductor, ESAKI-Diodes, Drift and Diffusion, TAMR, TASP, Anisotropy, MBE, Datta-Das Spin-FET, non-local, Spin-Valve, Hanle, Dynamic-Nuclear-Polarization DNP, GaAs, EBL, RIE
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:28423
Owner only: item control page


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