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Laterally self-ordered silicon-germanium islands with optimized confinement properties

Zabel, Thomas, Sircar, Narayan, Hauke, Norman, Zweck, Josef, Döblinger, Markus, Kaniber, Michael, Finley, J. J., Abstreiter, Gerhard, Arakawa, Y. and Bougeard, Dominique (2013) Laterally self-ordered silicon-germanium islands with optimized confinement properties. Applied Physics Letters 103, 063105.

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Date of publication of this fulltext: 23 Sep 2013 12:07

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Abstract

We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band ...

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Item type:Article
Date:2013
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1063/1.4818331DOI
Keywords:band structure, Ge-Si alloys, island structure, molecular beam epitaxial growth, photoluminescence, self-assembly, semiconductor epitaxial layers, semiconductor growth, wave functions
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:28840
Owner only: item control page

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