Go to content
UR Home

Laterally self-ordered silicon-germanium islands with optimized confinement properties

URN to cite this document:
DOI to cite this document:
Zabel, Thomas ; Sircar, Narayan ; Hauke, Norman ; Zweck, Josef ; Döblinger, Markus ; Kaniber, Michael ; Finley, J. J. ; Abstreiter, Gerhard ; Arakawa, Y. ; Bougeard, Dominique
License: Allianz- bzw. Nationallizenz
PDF - Published Version
Date of publication of this fulltext: 23 Sep 2013 12:07


We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons