Laterally self-ordered silicon-germanium islands with optimized confinement properties

URN to cite this document:: urn:nbn:de:bvb:355-epub-288403
DOI to cite this document:: 10.5283/epub.28840

Zabel, Thomas ; Sircar, Narayan ; Hauke, Norman ; Zweck, Josef ; Döblinger, Markus ; Kaniber, Michael ; Finley, J. J.

; Abstreiter, Gerhard ; Arakawa, Y. ; Bougeard, Dominique

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Date of publication of this fulltext: 23 Sep 2013 12:07

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Abstract

We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band ...