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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-288403
- DOI to cite this document:
- 10.5283/epub.28840
Alternative links to fulltext:DOI
Abstract
We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band ...

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