Zabel, Thomas, Sircar, Narayan, Hauke, Norman, Zweck, Josef, Döblinger, Markus, Kaniber, Michael, Finley, J. J., Abstreiter, Gerhard, Arakawa, Y. and Bougeard, Dominique (2013) Laterally self-ordered silicon-germanium islands with optimized confinement properties. Applied Physics Letters 103, 063105.
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Abstract
We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band ...
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | 2013 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard | ||||
| Identification Number: |
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| Keywords: | band structure, Ge-Si alloys, island structure, molecular beam epitaxial growth, photoluminescence, self-assembly, semiconductor epitaxial layers, semiconductor growth, wave functions | ||||
| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Partially | ||||
| Item ID: | 28840 |
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