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Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

Binder, M., Nirschl, A., Zeisel, R., Hager, T., Lugauer, H. - J., Sabathil, M., Bougeard, Dominique, Wagner, J. and Galler, B. (2013) Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. Applied Physics Letters 103, 071108.

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Abstract

We report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn)N QWs. Optically pumping solely the green QWs using a blue emitting high power laser diode, carrier densities similar to electrical light-emitting diode ...

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Item type:Article
Date:2013
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1063/1.4818761DOI
Keywords:aluminium compounds, Auger effect, carrier density, electron-hole recombination, excited states, gallium compounds, hot carriers, III-V semiconductors, indium compounds, optical pumping, photoluminescence, semiconductor quantum wells, wide band gap semiconductors
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:28841
Owner only: item control page

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