Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

URN to cite this document:

urn:nbn:de:bvb:355-epub-288411 Copy

DOI to cite this document:

10.5283/epub.28841 Copy

Binder, M. ; Nirschl, A. ; Zeisel, R. ; Hager, T. ; Lugauer, H.-J. ; Sabathil, M. ; Bougeard, Dominique ; Wagner, J. ; Galler, B.

Preview

License: Allianz- bzw. Nationallizenz PDF - Published Version (412kB)

Date of publication of this fulltext: 19 Oct 2016 12:52

---

Alternative links to fulltext:DOI

---

---

Details

Item type:	Article
Open Access Type:	Alliance-/National licence
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
Volume:	103
Page Range:	071108
Date:	2013
Institutions:	Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:	Value Type 10.1063/1.4818761 DOI
Keywords:	aluminium compounds, Auger effect, carrier density, electron-hole recombination, excited states, gallium compounds, hot carriers, III-V semiconductors, indium compounds, optical pumping, photoluminescence, semiconductor quantum wells, wide band gap semiconductors
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Yes, this version has been refereed
Created at the University of Regensburg:	Partially
Item ID:	28841

Preview

Export bibliographical data

ASCII CitationAtomBibTeXData Cite XMLDataCite XML OAIDublin CoreDublin Core (LZV)EndNoteHTML CitationJSONJSON LDMETSMODSOPENAIREOpenAPCRDF+N-TriplesRDF+N3RDF+XMLReferReference ManagerSimple MetadataXMLopenCostxMetaDissPlus

---

Abstract

We report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn)N QWs. Optically pumping solely the green QWs using a blue emitting high power laser diode, carrier densities similar to electrical light-emitting diode ...

Abstract

We report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn)N QWs. Optically pumping solely the green QWs using a blue emitting high power laser diode, carrier densities similar to electrical light-emitting diode (LED) operation were achieved, circumventing possible leakage and injection effects. This way, luminescence from the UV QWs could be observed for excitation where the emission from the green QWs showed significant droop, giving direct evidence for Auger generated hot electrons and holes being injected into the UV QWs. An examination of the quantitative relation between the intensity of the UV luminescence and the amount of charge carriers lost due to drooping of the QWs supports the conclusion that Auger processes contribute significantly to the droop phenomenon in (AlGaIn)N based light-emitting diodes.

---

---

Metadata last modified: 29 Sep 2021 07:39

Owner only: item control page

Download Statistics

Download Statistics

Download Statistics

Download Statistics

Downloads

Downloads per month over past year

Altmetric

Altmetric

Altmetric

Alternative Statistics (altmetrics)

More literature (via CORE)

More literature (via CORE)

More literature (via CORE)

More literature (via CORE)