Weak localization and Raman study of anisotropically etched graphene antidots

URN to cite this document:: urn:nbn:de:bvb:355-epub-288885
DOI to cite this document:: 10.5283/epub.28888

Oberhuber, Florian ; Blien, Stefan ; Heydrich, Stefanie ; Yaghobian, Fatemeh ; Korn, Tobias

; Schueller, Christian ; Strunk, Christoph ; Weiss, Dieter

; Eroms, Jonathan

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Date of publication of this fulltext: 07 Oct 2013 11:11

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Abstract

We study a crystallographic etching process of graphene nanostructures, where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 degrees C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy ...