Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

URN zum Zitieren dieses Dokuments:: urn:nbn:de:bvb:355-epub-295799
DOI zum Zitieren dieses Dokuments:: 10.5283/epub.29579

Radek, M. ; Bracht, H. ; Posselt, M. ; Schmidt, B. ; Bougeard, Dominique

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Veröffentlichungsdatum dieses Volltextes: 21 Mrz 2014 06:56

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Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 × 1015 cm−2 is investigated using isotopic multilayer structures of alternating 70 Ge and nat Ge layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent ...