Go to content
UR Home

Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

URN to cite this document:
urn:nbn:de:bvb:355-epub-295799
Radek, M. ; Bracht, H. ; Posselt, M. ; Schmidt, B. ; Bougeard, Dominique
[img]PDF - Published Version
(821kB)
Date of publication of this fulltext: 21 Mar 2014 06:56


Abstract

Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 × 1015 cm−2 is investigated using isotopic multilayer structures of alternating 70 Ge and nat Ge layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons