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Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

Radek, M., Bracht, H., Posselt, M., Schmidt, B. and Bougeard, Dominique (2014) Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures. Journal of Applied Physics 115, 023506.

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Abstract

Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 × 1015 cm−2 is investigated using isotopic multilayer structures of alternating 70 Ge and nat Ge layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent ...

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Item type:Article
Date:9 January 2014
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1063/1.4861174DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:29579
Owner only: item control page

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