Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

URN to cite this document:: urn:nbn:de:bvb:355-epub-295799
DOI to cite this document:: 10.5283/epub.29579

Radek, M. ; Bracht, H. ; Posselt, M. ; Schmidt, B. ; Bougeard, Dominique

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Date of publication of this fulltext: 21 Mar 2014 06:56

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Abstract

Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 x 10(15) cm(-2) is investigated using isotopic multilayer structures of alternating Ge-70 and Ge-nat layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent ...