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Quantitative modeling of the temperature-dependent internal Quantum Efficiency in InGaN light emitting diodes

URN to cite this document:
urn:nbn:de:bvb:355-epub-305326
Nirschl, Anna ; Gomez-Iglesias, Alvaro ; Sabathil, M. ; Hartung, Georg ; Off, Jürgen ; Bougeard, Dominique
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Date of publication of this fulltext: 31 Jul 2014 12:11


Abstract

The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN-based light emitting diodes is analyzed both experimentally and theoretically with a drift-diffusion transport model. A high-performance reference structure and two improved epitaxial designs are compared at different operating temperatures. In contrast to a simple ABC model, the proposed approach allows for ...

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