Long exciton in stacking-fault-free wurtztite GaAs nanowires

URN to cite this document:: urn:nbn:de:bvb:355-epub-310307
DOI to cite this document:: 10.5283/epub.31030

Furthmeier, Stephan

; Dirnberger, Florian ; Hubmann, Joachim ; Bauer, Benedikt ; Korn, Tobias

; Schüller, Christian ; Zweck, Josef ; Reiger, Elisabeth ; Bougeard, Dominique

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Date of publication of this fulltext: 12 Dec 2014 14:17

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Abstract

We present a combined photoluminescence and transmission electron microscopy study of single GaAs nanowires. Each wire was characterized both in microscopy and spectroscopy, allowing a direct correlation of the optical and the structural properties. By tuning the growth parameters, the nanowire crystal structure is optimized from a highly mixed zincblende-wurtzite structure to pure wurtzite. We ...