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Gate-modulated thermopower of disordered nanowires: II. Variable-Range Hopping Regime

URN to cite this document:
urn:nbn:de:bvb:355-epub-310763
Bosisio, Riccardo ; Gorini, Cosimo ; Fleury, Geneviève ; Pichard, Jean-Louis
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Date of publication of this fulltext: 14 Jan 2015 06:44



Abstract

We study the thermopower of a disordered nanowire in the field effect transistor configuration. After a first paper devoted to the elastic coherent regime (Bosisio, Fleury and Pichard 2014 New J. Phys. 16 035004), we consider here the inelastic activated regime taking place at higher temperatures. In the case where the charge transport is thermally assisted by phonons (Mott Variable Range Hopping ...

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