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Effect of Line Defects on the Electrical Transport
Properties of Monolayer MoS2 Sheet

Sengupta, A., Saha, D., Niehaus, Thomas A. and Mahapatra, S. (2015) Effect of Line Defects on the Electrical Transport
Properties of Monolayer MoS2 Sheet.
IEEE Transactions on Nanotechnology 14, p. 51.

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Abstract

We present a computational study on the impact of line defects on the electronic properties of monolayer MoS $_{2}$. Four different kinds of line defects with Mo and S as the bridging atoms, consistent with recent theoretical and experimental observations, are considered herein. We employ the density functional tight-binding (DFTB) method with a Slater–Koster-type DFTB-CP2K basis set for ...

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Item type:Article
Date:2015
Institutions:Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Thomas Niehaus
Identification Number:
ValueType
10.1109/TNANO.2014.2364038DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:31225
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