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Control of biaxial strain in singel-layer MoS2 using local thermal expansion of the substrate

Plechinger, Gerd ; Castellanos-Gomez, Andres ; Buscema, Michele ; van der Zant, Herre S. J. ; Steele, Gary A. ; Kuc, Agnieszka ; Heine, Thomas ; Schueller, Christian ; Korn, Tobias



Abstract

Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible substrate with the atomically thin MoS2 layer on top, experimental realization of biaxial strain is more challenging. Here, we exploit the large mismatch ...

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