Direkt zum Inhalt

Nirschl, A. ; Binder, M. ; Schmid, M. ; Karow, M. M. ; Pietzonka, I. ; Lugauer, H.-J. ; Zeisel, R. ; Bougeard, Dominique ; Galler, B. ;

Transport and capture properties of Auger-generated high-energy carriers in (AllnGa)N Quantum well structures

Nirschl, A., Binder, M., Schmid, M., Karow, M. M. , Pietzonka, I., Lugauer, H.-J., Zeisel, R., Bougeard, Dominique, Galler, B. und make_name_string expected hash reference (2015) Transport and capture properties of Auger-generated high-energy carriers in (AllnGa)N Quantum well structures. Journal of Applied Physics 118, 033103.

Veröffentlichungsdatum dieses Volltextes: 24 Jul 2015 11:44
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.32243


Zusammenfassung

Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa) N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the ...

Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa) N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the transfer probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the transfer distance to the generating well, and the number of detection wells. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa) N based LEDs. (C) 2015 AIP Publishing LLC.



Beteiligte Einrichtungen


Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftJournal of Applied Physics
Verlag:AMER INST PHYSICS
Ort der Veröffentlichung:MELVILLE
Band:118
Seitenbereich:033103
Datum21 Juli 2015
InstitutionenPhysik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard
Identifikationsnummer
WertTyp
10.1063/1.4927154DOI
Stichwörter / KeywordsLIGHT-EMITTING-DIODES; EFFICIENCY DROOP;
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetJa, diese Version wurde begutachtet
An der Universität Regensburg entstandenZum Teil
URN der UB Regensburgurn:nbn:de:bvb:355-epub-322439
Dokumenten-ID32243

Bibliographische Daten exportieren

Nur für Besitzer und Autoren: Kontrollseite des Eintrags

nach oben