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Transport and capture properties of Auger-generated high-energy carriers in (AllnGa)N Quantum well structures
Nirschl, A., Binder, M., Schmid, M., Karow, M. M.
, Pietzonka, I., Lugauer, H.-J., Zeisel, R., Bougeard, Dominique, Galler, B. und make_name_string expected hash reference
(2015)
Transport and capture properties of Auger-generated high-energy carriers in (AllnGa)N Quantum well structures.
Journal of Applied Physics 118, 033103.
Veröffentlichungsdatum dieses Volltextes: 24 Jul 2015 11:44
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.32243
Zusammenfassung
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa) N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the ...
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa) N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the transfer probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the transfer distance to the generating well, and the number of detection wells. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa) N based LEDs. (C) 2015 AIP Publishing LLC.
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| Dokumentenart | Artikel | ||||
| Titel eines Journals oder einer Zeitschrift | Journal of Applied Physics | ||||
| Verlag: | AMER INST PHYSICS | ||||
|---|---|---|---|---|---|
| Ort der Veröffentlichung: | MELVILLE | ||||
| Band: | 118 | ||||
| Seitenbereich: | 033103 | ||||
| Datum | 21 Juli 2015 | ||||
| Institutionen | Physik > Institut für Experimentelle und Angewandte Physik > Lehrstuhl Professor Huber > Arbeitsgruppe Dominique Bougeard | ||||
| Identifikationsnummer |
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| Stichwörter / Keywords | LIGHT-EMITTING-DIODES; EFFICIENCY DROOP; | ||||
| Dewey-Dezimal-Klassifikation | 500 Naturwissenschaften und Mathematik > 530 Physik | ||||
| Status | Veröffentlicht | ||||
| Begutachtet | Ja, diese Version wurde begutachtet | ||||
| An der Universität Regensburg entstanden | Zum Teil | ||||
| URN der UB Regensburg | urn:nbn:de:bvb:355-epub-322439 | ||||
| Dokumenten-ID | 32243 |
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