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Three-dimensional topological insulator based on a strained HgTe film

Kozlov, D. A., Kvon, Z. D., Savchenko, M.L., Weiss, Dieter, Mikhailov, N. N. and Dvoretskii, S.A. (2015) Three-dimensional topological insulator based on a strained HgTe film. Low Temperature Physics 41 (2), p. 82.

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We investigated electron and hole transport in a three-dimensional topological insulator based on a high-mobility (up to 4 × 105 cm2/V·s) 80-nm-thick strained mercury telluride film. The presence of the gate electrode made it possible to shift the position of the Fermi energy from the valence band through the bulk gap to the conduction band. Specific features observed in classical and quantum ...


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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:32535
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