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GaAs nanowires: Epitaxy, crystal structure-related properties and magnetic heterostructures

Hubmann, Joachim (2016) GaAs nanowires: Epitaxy, crystal structure-related properties and magnetic heterostructures. Dissertationsreihe der Fakultät für Physik der Universität Regensburg 48, PhD, Universität Regensburg.

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Date of publication of this fulltext: 08 Apr 2016 10:59

Abstract (English)

The intention of this work is twofold: On the one hand, we explore the controlability of GaAs nanowire growth concerning orientation, shape and crystal structure. These are necessary steps, since the growth of GaAs nanowires proceeds not necessarily uniformly, and in GaAs nanowires the in bulk unstable wurtzite phase, and the usual observed zinc-blende crystal phase may coexist in one and the ...


Translation of the abstract (German)

In dieser Arbeit werden zweierlei Eigenschaften im Nanodrahtwachstum untersucht: Einerseits, das Wachstum von GaAs Nanodrähten hinsichtlich Richtung, Form und Kristallstruktur. Diese Untersuchungen sind nötig, da sich GaAs Nanodrähte normalerweise nicht einheitlich bilden, und ihre Kristallstruktur zusätzlich zur im Volumenkristall stabilen kubischen Zinkblende-Phase die hexagonale Wurtzit-Phase ...


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Item type:Thesis of the University of Regensburg (PhD)
Series of the University of Regensburg:Dissertationsreihe der Fakultät für Physik der Universität Regensburg
Date:8 April 2016
Referee:Prof. Dr. Dominique Bougeard
Date of exam:22 December 2015
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Keywords:epitaxy, GaAs, nanowires, magnetic heterostructures
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:33202
Owner only: item control page


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