Scanning transmission electron microscopy strain measurement from millisecond frames of a direct electron charge coupled device

URN to cite this document:: urn:nbn:de:bvb:355-epub-347593
DOI to cite this document:: 10.5283/epub.34759

Müller, Knut ; Ryll, Henning ; Ordavo, Ivan ; Ihle, Sebastian ; Strüder, Lothar ; Volz, Kerstin ; Zweck, Josef

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Date of publication of this fulltext: 24 Oct 2016 14:12

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Abstract

A high-speed direct electron detection system is introduced to the field of transmission electron microscopy and applied to strain measurements in semiconductor nanostructures. In particular, a focused electron probe with a diameter of 0.5 nm was scanned over a fourfold quantum layer stack with alternating compressive and tensile strain and diffracted discs have been recorded on a ...