Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

URN to cite this document:: urn:nbn:de:bvb:355-epub-348487
DOI to cite this document:: 10.5283/epub.34848

Faltermeier, Philipp ; Olbrich, Peter ; Probst, W. ; Schell, L. ; Watanabe, T. ; Boubanga-Tombet, S. A. ; Otsuji, T. ; Ganichev, Sergey

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Date of publication of this fulltext: 21 Nov 2016 13:08

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Abstract

We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the ...