Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime
Article
Plank, Helene, Tarasenko, S. A., Hummel, T., Knebl, G., Pfeffer, P., Kamp, M., Höfling, S. and Ganichev, Sergey (2017) Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime. Physica E: Low-dimensional Systems and Nanostructures 85, 193 - 198.Alternative links to fulltext
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| Item type | Article | ||||
| Journal or Publication Title | Physica E: Low-dimensional Systems and Nanostructures | ||||
| Publisher | ELSEVIER SCIENCE BV | ||||
| Place of Publication | AMSTERDAM | ||||
| Volume | 85 | ||||
| Page Range | 193 - 198 | ||||
| Date | 2017 | ||||
| Date of publication | 29 Nov 2016 12:51 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number |
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| Keywords | TOPOLOGICAL INSULATORS; DEEP IMPURITIES; SEMICONDUCTORS; IONIZATION; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| Item ID | 34916 |
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