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Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime

Plank, Helene, Tarasenko, S.A., Hummel, T., Knebl, G., Pfeffer, P., Kamp, M., Höfling, S. and Ganichev, Sergey (2017) Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime. Physica E: Low-dimensional Systems and Nanostructures 85, 193 - 198.

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Other URL: http://www.sciencedirect.com/science/article/pii/S1386947716308244


Abstract

We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consist of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly ...

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Item type:Article
Date:2017
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:Elite Network of Bavaria (K-NW-2013-247)
Identification Number:
ValueType
10.1016/j.physe.2016.08.036DOI
Keywords:TOPOLOGICAL INSULATORS; DEEP IMPURITIES; SEMICONDUCTORS; IONIZATION;
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:34916
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