Startseite UR

Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime

Plank, Helene ; Tarasenko, S. A. ; Hummel, T. ; Knebl, G. ; Pfeffer, P. ; Kamp, M. ; Höfling, S. ; Ganichev, Sergey



Zusammenfassung

We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consist of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly ...

plus


Nur für Besitzer und Autoren: Kontrollseite des Eintrags
  1. Universität

Universitätsbibliothek

Publikationsserver

Kontakt:

Publizieren: oa@ur.de
0941 943 -4239 oder -69394

Dissertationen: dissertationen@ur.de
0941 943 -3904

Forschungsdaten: datahub@ur.de
0941 943 -5707

Ansprechpartner