Gate-tunable large magnetoresistance in an allsemiconductor spin valve device

URN to cite this document:: urn:nbn:de:bvb:355-epub-365104
DOI to cite this document:: 10.5283/epub.36510

Oltscher, Martin ; Eberle, Franz ; Kuczmik, Thomas ; Bayer, Andreas ; Schuh, Dieter ; Bougeard, Dominique ; Ciorga, Mariusz ; Weiss, Dieter

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Date of publication of this fulltext: 19 Jan 2018 10:11

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Abstract

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle ...