| License: Creative Commons Attribution 4.0 PDF - Published Version (1MB) |
- URN to cite this document:
- urn:nbn:de:bvb:355-epub-365104
- DOI to cite this document:
- 10.5283/epub.36510
Abstract
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle ...

Owner only: item control page