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Gate-tunable large magnetoresistance in an allsemiconductor spin valve device

Oltscher, Martin, Eberle, Franz, Kuczmik, Thomas, Bayer, Andreas, Schuh, Dieter, Bougeard, Dominique, Ciorga, Mariusz and Weiss, Dieter (2017) Gate-tunable large magnetoresistance in an allsemiconductor spin valve device. Nature Communications 8 (1807).

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Date of publication of this fulltext: 19 Jan 2018 10:11

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Other URL: https://www.nature.com/articles/s41467-017-01933-2

Dieser Artikel ist in einer Zeitschrift aus dem Directory of Open Access (DOAJ) publiziert.


Abstract

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle ...

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Item type:Article
Date:27 November 2017
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1038/s41467-017-01933-2DOI
Keywords:FIELD-EFFECT TRANSISTOR; ELECTRICAL DETECTION; ROOM-TEMPERATURE; SILICON; SPINTRONICS; PRECESSION; INJECTION; CONTACTS;
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:36510
Owner only: item control page

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