Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements

URN to cite this document:: urn:nbn:de:bvb:355-epub-373843
DOI to cite this document:: 10.5283/epub.37384

Kirschbaum, Jochen ; Teuber, T. ; Donner, A. ; Radek, M. ; Bougeard, Dominique ; Böttger, R. ; Lundsgaard Hansen, J. ; Nylandsted Larsen, A. ; Posselt, M. ; Bracht, H.

Preview

PDF
(204kB)

Date of publication of this fulltext: 11 Jun 2018 11:19

Alternative links to fulltext:DOI

Details

Preview

Indexed in

Export bibliographical data

Abstract

Experiments on self-diffusion in amorphous silicon (Si) were performed at temperatures between 460 to 600 degrees C. The amorphous structure was prepared by Si ion implantation of single crystalline Si isotope multilayers epitaxially grown on a silicon-on-insulator wafer. The Si isotope profiles before and after annealing were determined by means of secondary ion mass spectrometry. Isothermal ...