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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-380436
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.38043
Alternative Links zum Volltext:DOI
Zusammenfassung
Three-dimensional topological insulators (TIs) have attracted tremendous interest for their possibility to host massless Dirac Fermions in topologically protected surface states (TSSs), which may enable new kinds of high-speed electronics. However, recent reports have outlined the importance of band bending effects within these materials, which results in an additional two-dimensional electron ...
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