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Capacitance‐Voltage Measurements of (Bi1‐xSbx)2Te3 Field Effect Devices

URN to cite this document:
urn:nbn:de:bvb:355-epub-383752
DOI to cite this document:
10.5283/epub.38375
Wang, Jimin ; Schitko, Markus ; Mussler, Gregor ; Gruetzmacher, Detlev ; Weiss, Dieter
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Date of publication of this fulltext: 20 Feb 2019 15:27


Abstract

Capacitance-voltage (C-V) traces in n-type-(Bi1-xSbx)(2)Te-3/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (V-tg) from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. The results show the typical low-frequency and high frequency C-V traces, depending on measuring ...

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