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Capacitance‐Voltage Measurements of (Bi1‐xSbx)2Te3 Field Effect Devices

Wang, Jimin , Schitko, Markus, Mussler, Gregor, Gruetzmacher, Detlev and Weiss, Dieter (2019) Capacitance‐Voltage Measurements of (Bi1‐xSbx)2Te3 Field Effect Devices. physica status solidi b (180062), pp. 1-6.

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Other URL: https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201800624


Abstract

Capacitance‐voltage (C–V) traces in n‐type‐(Bi1‐xSbx)2Te3/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (Vtg) from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. The results show the typical low‐frequency and high frequency C–V traces, depending on measuring ...

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Item type:Article
Date:14 February 2019
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Projects:SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität, The European Research Council. Grant Number: 787515, The Alexander von Humboldt Foundation
Identification Number:
ValueType
10.1002/pssb.201800624DOI
Keywords:topological insulators, low temperatures, (Bi1-xSbx)2Te3 (BST), capacitance measurements
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:38375
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