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Capacitance‐Voltage Measurements of (Bi1‐xSbx)2Te3 Field Effect Devices

URN to cite this document:
urn:nbn:de:bvb:355-epub-383752
DOI to cite this document:
10.5283/epub.38375
Wang, Jimin ; Schitko, Markus ; Mussler, Gregor ; Gruetzmacher, Detlev ; Weiss, Dieter
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Date of publication of this fulltext: 20 Feb 2019 15:27


Abstract

Capacitance‐voltage (C–V) traces in n‐type‐(Bi1‐xSbx)2Te3/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (Vtg) from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. The results show the typical low‐frequency and high frequency C–V traces, depending on measuring ...

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