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Proximity Effects in Bilayer Graphene on Monolayer WSe2 : Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor

Gmitra, Martin and Fabian, Jaroslav (2017) Proximity Effects in Bilayer Graphene on Monolayer WSe2 : Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor. Physical Review Letters 119 (14).

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Other URL: http://doi.org/10.1103/PhysRevLett.119.146401


Abstract

Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe2 are investigated from first principles. We find that the built-in electric field induces an orbital band gap of about 10 me V in bilayer graphene. Remarkably, the proximity spin-orbit splitting for holes is 2 orders of magnitude-the spin-orbit splitting of the valence band at K is about 2 meV-more than for electrons. ...

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Item type:Article
Date:2017
Institutions:Physics > Institute of Theroretical Physics
Identification Number:
ValueType
10.1103/PhysRevLett.119.146401DOI
Keywords:DER-WAALS HETEROSTRUCTURES; HGTE QUANTUM-WELLS; TRANSITION; SURFACE; SPINTRONICS; METAL; SEMICONDUCTOR; DEVICES; BANDGAP; STATE;
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:39686
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