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High-frequency rectification in graphene lateral p-n junctions
Vasilyev, A., Vasileva, G. Yu., Novikov, S., Tarasenko, S. A., Danilov, Sergey N. and Ganichev, Sergey
(2018)
High-frequency rectification in graphene lateral p-n junctions.
Applied Physics Letters (APL) 112, 041111.
Date of publication of this fulltext: 02 Apr 2019 07:50
Article
DOI to cite this document: 10.5283/epub.40043
Abstract
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. Published by AIP Publishing.
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters (APL) | ||||
| Publisher: | AMER INST PHYSICS | ||||
|---|---|---|---|---|---|
| Place of Publication: | MELVILLE | ||||
| Volume: | 112 | ||||
| Page Range: | 041111 | ||||
| Date | 2018 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number |
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| Keywords | PHOTODETECTORS; PHOTORESPONSE; IRRADIATION; FIELD; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-400433 | ||||
| Item ID | 40043 |
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