Go to content
UR Home

High-frequency rectification in graphene lateral p-n junctions

Vasilyev, A., Vasileva, G. Yu., Novikov, S., Tarasenko, S. A., Danilov, Sergey N. and Ganichev, Sergey (2018) High-frequency rectification in graphene lateral p-n junctions. Applied Physics Letters (APL) 112, 041111.

Full text not available from this repository.

at publisher (via DOI)

Other URL: https://aip.scitation.org/doi/abs/10.1063/1.5013100


Abstract

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.


Export bibliographical data



Item type:Article
Date:2018
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:GRK 1570, Elektronische Eigenschaften von Nanostrukturen auf Kohlenstoff-Basis, SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität
Identification Number:
ValueType
10.1063/1.5013100DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:40043
Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons