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High-frequency rectification in graphene lateral p-n junctions

Vasilyev, A., Vasileva, G. Yu., Novikov, S., Tarasenko, S. A., Danilov, Sergey N. and Ganichev, Sergey (2018) High-frequency rectification in graphene lateral p-n junctions. Applied Physics Letters (APL) 112, 041111.

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Other URL: https://aip.scitation.org/doi/abs/10.1063/1.5013100


We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.

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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:GRK 1570, Elektronische Eigenschaften von Nanostrukturen auf Kohlenstoff-Basis, SFB 1277: Emergente relativistische Effekte in der Kondensierten Materie: Von grundlegenden Aspekten zu elektronischer Funktionalität
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:40043
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