High-frequency rectification in graphene lateral p-n junctions

URN to cite this document:: urn:nbn:de:bvb:355-epub-400433
DOI to cite this document:: 10.5283/epub.40043

Vasilyev, A. ; Vasileva, G. Yu. ; Novikov, S. ; Tarasenko, S. A. ; Danilov, Sergey N. ; Ganichev, Sergey

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Date of publication of this fulltext: 02 Apr 2019 07:50

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Abstract

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. Published by AIP Publishing.

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